Chemical and Biomolecular Engineering

Top 20 Doctoral Program — National Research Council

Economou

Demetre J. Economou
Dr. Demetre J. Economou

Professor of Chemical and Biomolecular Engineering
Hugh Roy and Lillie Cranz Cullen Distinguished University Chair

Office Location: S239, Engineering Building 1
Phone: 713-743-4320   |   Fax: 713-743-4323
Email: economou [at] uh [dot] edu
economou's research

More Publications:

Journal Papers / Refereed Journal Publications
  1. L. Xu, S. C. Vemula, M. Jain, S. K. Nam, V. M. Donnelly, D. J. Economou, and P. Ruchhoeft, “Nanopantography: A New Method for Massively Parallel Nanopatterning over Large Areas,” Nano Lett., 5, 2563-2568, 2005
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  2. O Polomarov, C. Theodosiou, I. Kaganovich, B. Ramamurthi, and D. J. Economou, “Effectiveness of electron-cyclotron and transmission resonance heating in inductively coupled plasmas,” Phys. Plasmas, 12, 104505, 2005
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  3. Q. Wang, I. Koleva, V. M. Donnelly, and D. J. Economou, “Spatially Resolved Diagnostics of a Direct Current Atmospheric Pressure Helium Micro-plasma,” J. Phys. D: Appl. Phys., 38, 1690-1697, 2005
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  4. S. Nam, V. M. Donnelly and D. J. Economou, “Particle-in-cell simulation of ion flow through a hole in contact with plasma,” IEEE Trans. Plasma Sci., 33, 232, 2005
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  5. S.G. Belostotsky, D.J. Economou, D.V. Lopaev, and T.V. Rakhimova, “Negative Ion Destruction by O(3P) Atoms and O2(a1∆g) Molecules in an Oxygen Plasma,” Plasma Sources Science and Technology, 14, 532-542, 2005
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  6. D. Economou, “Electronegative Plasma Reactor Engineering,” in Gaseous Dielectrics X, edited by L. Christophorou, J. Olthoff, and P. Vassiliou, p. 157-166, Springer, 2004
  7. D. Kim and D. J. Economou, “Simulation of a Two-Dimensional Sheath over a Flat Insulator-Conductor Interface on a RF Biased Electrode in a High Density Plasma,” J. Appl. Phys., 95, 3311-3318, 2004
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  8. S. K. Nam and D. J. Economou, “Two-Dimensional Simulation of a Miniaturized Inductively Coupled Plasma,” J. Appl. Phys., 95, 2272-2277, 2004
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  9. B. Ramamurthi, D. J. Economou, and I. Kaganovich, “Effect of Electron Energy Distribution Function on Power Deposition and Plasma Density in an Inductively Coupled Discharge at Very Low Pressures,” Plasma Sources Sci. Technol., 12, 302-312, 2003
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  10. B. Ramamurthi, D. J. Economou, and I. Kaganovich, “Effect of non-local electron conductivity on power absorption and plasma density profiles in low pressure inductively coupled discharges,” Plasma Sources Sci. Technol., 12, 170, 2003
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  11. D. Kim and D. J. Economou, “Plasma Molding over Deep Trenches and the Resulting Ion and Energetic Neutral Distributions,” J. Vac. Sci. Technol. B, 21, 1248-1253, 2003
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  12. D. Kim and D. J. Economou, “Simulation of Plasma Molding over a Ring on a Flat Surface,” J. Appl. Phys., 94, 3740-3747, 2003
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  13. D. Kim and D. J. Economou, “Simulation of a Two-Dimensional Sheath over a Flat Wall with an Insulator-Conductor Interface Exposed to a High Density Plasma,” J. Appl. Phys., 94, 2852-2857, 2003
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  14. D. Kim, D. J. Economou, J. R. Woodworth, P. A. Miller, R. J. Shul, I. C. Abraham, B. P. Aragon, and T. W. Hamilton, “Plasma Molding Over Surface Topography: Simulation and Measurement of Ion Fluxes, Energies and Angular Distributions Over Trenches in RF High Density Plasmas,” IEEE Trans. Plasma Sci., 31, 691-702, 2003
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  15. J. R. Woodworth, P. A. Miller, R. J. Shul, I. C. Abraham, B. P. Aragon, T. W. Hamilton, C. G. Willison, D. Kim, and D. J. Economou, “An experimental and theoretical study of ion distributions near 300-μm-tall steps on rf-biased wafers in high density plasmas,” J. Vac. Sci. Technol. A, 21, 147-155, 2003
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  16. B. Ramamurthi and D. J. Economou, “Pulsed Power Plasma Reactors: Two Dimensional Electropositive Discharge Simulation in a GEC Reference Cell,” Plasma Sources Science and Technology, 11, 324-332, 2002
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  17. B. Ramamurthi and D. J. Economou, “Metastable argon density evolution in a pulsed ICP discharge,” IEEE Trans. Plasma Sci., 30(1), 152, 2002
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  18. B. Ramamurthi and D. J. Economou, “Two-Dimensional Pulsed-Plasma Simulation of a Chlorine Discharge,” J. Vac. Sci. Technol. A, 20, 467-478, 2002
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  19. C.-K. Kim and D. J. Economou, “Plasma Molding over Surface Topography: Energy and Angular Distributions of Ions Extracted out of Large Holes,” J. Appl. Phys., 91, 2594-2603, 2002
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  20. D. Kim and D. J. Economou, “Plasma Molding over Surface Topography: Simulation of Ion Flow and Energy and Angular Distributions over Steps in RF High Density Plasmas,” IEEE Trans. Plasma Sci., 30(5), 2048-2058, 2002
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  21. D. Kim and D. J. Economou, “Energy and angular distributions of ions and neutrals extracted from a slot in contact with a high density plasma,” IEEE Trans. Plasma Sci., 30(1), 126, 2002
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  22. Doosik Kim and Demetre J. Economou, “Plasma Molding over Surface Topography,” JSME International Journal, Series B, 45(1), 117-122, 2002
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  23. T. Panagopoulos, V. Midha, D. Kim and D. J. Economou, “Three-Dimensional Simulation of Inductively Coupled Plasma Reactors,” J. Appl. Phys., 91, 2687-2696, 2002
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  24. V. Midha, B. Ramamurthi, and D. J. Economou, “Time Evolution of an Ion-Ion Plasma after the Application of a Direct Current Bias,” J. Appl. Phys., 91, 6282-6287, 2002
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  25. B. Ramamurthi and D. J. Economou, “Two-dimensional simulation of a pulsed electronegative discharge,” Journal de Physique (IV), 11(Pr3), 163-169, 2001
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  26. I. D. Kaganovich, B. N. Ramamurthi, and D. J. Economou, “Spatiotemporal Dynamics of Charged Species in the Afterglow of Plasmas Containing Negative Ions,” Phys. Rev. E, 64, 036402, 2001
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  27. S. K. Kanakasabapathy, L. J. Overzet, V. Midha, and D. J. Economou, “Alternating Fluxes of Positive and Negative Ions from an Ion-Ion Plasma,” Appl. Phys. Lett., 78, 22-24, 2001
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  28. S. Panda, D. J. Economou, and L. Chen, “Anisotropic Etching of Polymer Thin Films by High Energy (100s of eV) Oxygen Atom Neutral Beams,” J. Vac. Sci. Technol., A19, 398-404, 2001
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  29. V. Midha and D. J. Economou, “Dynamics of an Ion-Ion Plasma under Radio Frequency Bias,” J. Appl. Phys., 90, 1102, 2001
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  30. D. J. Economou, “Modeling and Simulation of Plasma Etching Reactors for Microelectronics,” Thin Solid Films, 365, 348-367, 2000
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  31. I. Kaganovich, D. J. Economou, B. N. Ramamurthi, and V. Midha, “Negative Ion Density Fronts During Ignition and Extinction of Plasmas in Electronegative Gases,” Phys. Rev. Lett., 84, 1918-1921, 2000
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  32. I. Kaganovich, D.B. Ramamurthi, and D. J. Economou, “Self-Trapping of Negative Ions due to Electron Detachment in the Afterglow of Electronegative Gas Plasmas,” Appl. Phys. Lett., 76, 2844-2846, 2000
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  33. J. Feldsien, D. Kim, and D. J. Economou, “SiO2 Etching in Inductively Coupled Plasmas: Surface Chemistry and Two-Dimensional Simulations,” Thin Solid Films, 374, 311-325, 2000
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  34. S. Panda, D. J. Economou, and M. Meyyappan, “Effect of Metastable Oxygen Molecules in High-Density Power Modulated Oxygen Discharges,” J. Appl Phys., 87, 8323-8333, 2000
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  35. V. Midha and D. J. Economou, “Spatiotemporal Evolution of a Pulsed Chlorine Discharge,” Plasma Sources Sci. Technol., 9, 256-269, 2000
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  36. C.-K. Kim, N. A. Kubota, and D. J. Economou, “Molecular Dynamics Simulation of Silicon Surface Smoothing by Low-Energy Argon Cluster Impact,” J. Appl. Phys., 86(12), 6758-6762, 1999
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  37. D. J. Economou, “Plasma Reactor Engineering,” in Advances in Electrochemistry and Electrochemical Engineering, Vol. 6, p. 237, edited by R. C. Alkire and D. M. Kolb, Wiley-VCH, 1999
  38. D. J. Economou, N. A. Kubota, and R. S. Wise, “Plasmoid Formation and Multiple Steady States in a Low Pressure Inductively Coupled Electronegative Plasmas,” IEEE Trans. Plasma Sci., 27, 60, 1999
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  39. N. A. Kubota, and D. J. Economou, “A Molecular Dynamics Simulation of Ultrathin Oxide Films on Silicon: Growth by Thermal O Atoms and Sputtering by 100 eV Ar+ Ions,” IEEE Trans. Plasma Sci., 27(5), 1416-1425, 1999
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  40. N. A. Kubota, and D. J. Economou, “Molecular Dynamics Simulations of Ion-Induced Rearrangements of Ultrathin Oxide Films on Silicon,” IEEE Trans. Plasma Sci., 27, 106, 1999
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  41. N. Gupta, V. Midha, V. Balakotaiah, and D. J. Economou, “Bifurcation Analysis of Thermal Runaway in Microwave Heating of Ceramics,” J. Electrochem. Soc., 146(2), 4659-4665, 1999
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  42. S. Panda, J. Kim, B. H. Weiller, D. J. Economou, and D. M. Hoffman, “Low Temperature Chemical Vapor Deposition of Titanium Nitride Films from Tetrakis (ethylmethylamido) titanium and ammonia,” Thin Solid Films, 357, 125-131, 1999
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  43. S.-K. Nam, C. B. Shin, and D. J. Economou, “Two-dimensional plasma reactor simulation with self-consistent coupling of gas flow with plasma transport,” Materials Science in Semiconductor Processing, 2, 271-279, 1999
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  44. T. Panagopoulos and D. J. Economou, “Plasma Sheath Model and Ion Energy Distribution for All Radio Frequencies,” J. Appl. Phys., 85, 3435, 1999
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  45. D. J. Economou, J. Feldsien, and R. S. Wise, “Transport and Reaction in Inductively Coupled Plasmas for Microelectronics,” in Electron Kinetics and Applications of Glow Discharges, edited by U. Kortshagen and L. D. Tsendin, NATO Advanced Research Workshop, Plenum, 1998
  46. D. J. Economou, T. L. Panagopoulos, and M. Meyyappan, “Examining Scale-Up and Computer Simulation in Tool Design for 300-mm wafer Processing,” Micro, 16(7), 101-113, 1998
  47. D. P. Lymberopoulos, V. I. Kolobov, and D. J. Economou, “Fluid Simulation of a Pulsed-Power Inductively Coupled Argon Plasma,” J. Vac. Sci. Technol. A, 16, 564-571, 1998
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  48. N. A. Kubota, D. J. Economou, and S. Plimpton, “Molecular Dynamics Simulations of Low Energy (25-200 eV) Argon Ion Interactions with Silicon Surfaces: Sputter Yields and Product Formation Pathways,” J. Appl. Phys., 83, 4055-4063, 1998
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  49. V. I. Kolobov and D. J. Economou, “Ion-Ion Plasmas in Weakly Collisional Discharges in Electronegative Gases,” Appl. Phys. Lett., 72, 656-658, 1998
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  50. V. Midha and D. J. Economou, “A Two-Dimensional Model of Chemical Vapor Infiltration with Radio Frequency Heating II: Strategies to Achieve Complete Densification,” J. Electrochem. Soc., 145, 3569-3580, 1998
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  51. J. Johannes, T. Bartel, G. A. Hebner, J. Woodworth, and D. J. Economou, “Direct Simulation Monte Carlo of Inductively Coupled Plasma and Comparison with Experiments,” J. Electrochem Soc., 144, 2448-2455, 1997
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  52. V. I. Kolobov and D. J. Economou, “Anomalous Skin Effect in Gas Discharge Plasmas,” Plasma Sources Sci. & Technol., 6, R1-R17, 1997
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  53. V. I. Kolobov, D. P. Lymberopoulos, and D. J. Economou, “Electron Kinetics and Non-Joule Heating in Near Collisionless Inductively Coupled Plasmas,” Physical Review E, 55, 3408, 1997
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  54. V. Midha and D. J. Economou, “A Two-Dimensional Model of Chemical Vapor Infiltration with Radio Frequency Heating,” J. Electrochem. Soc., 144, 4062-4071, 1997
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  55. D. J. Economou, “The Chemistry of Plasma Etching,” in The Chemistry of Electronic Materials, H. B. Pogge, editor, pp. 251-322, Marcel Dekker, Inc., 1996
  56. D. J. Economou and T. J. Bartel, “Direct Simulation Monte Carlo (DSMC) of Rarefied Gas Flow During Etching of Large Diameter (300 mm) Wafers,” IEEE Trans. Plasma Sci., 24, 131, 1996
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  57. D. Lymberopoulos, R. Wise, D. J. Economou, and T. Bartel, “Ion Density and Temperature Distribution in an Inductively Coupled High Plasma Density Reactor,” IEEE Trans. Plasma Sci., 24, 129, 1996
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  58. D. M. Hoffman, S. P. Rangarajan, S. D. Athavale, D. J. Economou, J.-R. Liu, Z. Zheng, and W.-K. Chu, “Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors,” J. Vac. Sci. Technol. A, 14, 306-311, 1996
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  59. J. Johannes, T. Bartel, D. Economou, D. Lymberopoulos and R. Wise, “Simulation Images from a Low Pressure Chlorine Plasma Reactor Using the Direct Simulation Monte Carlo Method,” IEEE Trans. Plasma Sci., 24, 127, 1996
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  60. R. Wise, D. Lymberopoulos and D. J. Economou, “Rapid Two-Dimensional Self-Consistent Simulation of Inductively Coupled Plasma and Comparison with Experiments,” Appl. Phys. Lett., 68, 2499, 1996
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  61. S. Athavale and D. J. Economou, “Realization of Atomic Layer Etching (ALET) of Silicon,” J. Vac. Sci. Technol. B, 14, 3702, 1996
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  62. D. J. Economou, T. J. Bartel, R. S. Wise and D. P. Lymberopoulos, “Two-Dimensional Direct Simulation Monte Carlo (DSMC) of Reactive Ion and Neutral Flow in a High Density Plasma Reactor,” IEEE Trans. Plasma Sci., 23, 581-590, 1995
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  63. D. M. Hoffman, S. P. Rangarajan, S. D. Athavale, D. J. Economou, J.-R. Liu, Z. Zheng, and W.-K. Chu, “Plasma enhanced chemical vapor deposition of silicon, germanium and tin nitride thin films from metal-organic precursors,” J. Vac. Sci. Technol. A, 13, 820-825, 1995
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  64. D. P. Lymberopoulos and D. J. Economou, “Two-Dimensional Self-Consistent Radio Frequency Plasma Simulations Relevant to the Gaseous Electronics Conference (GEC) Reference Cell,” Journal of Research of the National Institute of Standards and Technology, 100, 473-494, 1995
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  65. D. P. Lymberopoulos and D. J. Economou, “Two-Dimensional Simulation of Polysilicon Etching with Chlorine in a High Density Plasma Reactor,” IEEE Trans. Plasma Sci., 23, 573-580, 1995
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  66. D. P. Lymberopoulos and D. J. Economou, “Spatiotemporal Electron Dynamics in Radio Frequency Glow Discharges,” J. Phys. D: Appl. Phys., 28, 727-737, 1995
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  67. P. Jiang, D. J. Economou, and C. B. Shin, “Effect of Power Modulation on Radical Concentration and Uniformity in a Single-Wafer Plasma Reactor,” Plasma Chemistry Plasma Process., 15, 383-408, 1995
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  68. R. S. Wise, D. P. Lymberopoulos and D. J. Economou, “A Two-Region Model of a Radio Frequency Low-Pressure High-Density Glow Discharge,” Plasma Sources Sci. Technol., 4, 317-331, 1995
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  69. S. D. Athavale and D. J. Economou, “Molecular Dynamics Simulation of Atomic Layer Etching (ALET) of Silicon,” J. Vac. Sci. Technol. A, 13, 966-971, 1995
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  70. D. M. Hoffman, S. P. Rangarajan, S. D. Athavale, D. J. Economou, J.-R. Liu, Z. Zheng, and W.-K. Chu, “Plasma Enhanced Metalorganic Chemical Vapor Deposition of Germanium Nitride Thin Films,” Mater. Res. Soc. Symp. Proc., 335, 3-7, 1994
  71. D. M. Hoffman, S. P. Rangarajan, S. D. Athavale, S. C. Deshmukh, D. J. Economou, J.-R. Liu, Z. Zheng, and W.-K. Chu, “Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films from Metalorganic Precursors,” J. Mater. Res., 12,  3019-3021, 1994
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  72. D. P. Lymberopoulos and D. J. Economou, “Modeling and Simulation of Glow Discharge Plasma Reactors,” J. Vac. Sci. Technol. A, 12, 1229-1236, 1994
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  73. N. L. Bassett and D. J. Economou, “Effect of Cl2 Additions to an Argon Glow Discharge,” J. Appl. Phys., 75, 1931-1939, 1994
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  74. C. R. Koemtzopoulos, D. J. Economou, and R. Pollard, “Hydrogen Dissociation in a Microwave Discharge for Diamond Deposition,” Diamond and Related Materials, 2, 25-35, 1993
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  75. D. P. Lymberopoulos and D. J. Economou, “Fluid Simulations of Glow Discharges: Effect of Metastable Atoms in Ar,” J. Appl. Phys., 73, 3668-3679, 1993
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  76. D. P. Lymberopoulos and D. J. Economou, “Fluid Simulations of Radio Frequency Glow Discharges: Two-Dimensional Argon Discharge Including Metastables,” Appl. Phys. Lett., 63, 2478-2480, 1993
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  77. E. S. Aydil and D. J. Economou, “Modeling of Plasma Etching Reactors Including Wafer Heating Effects,” J. Electrochem. Soc., 140, 1471-1481, 1993
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  78. J. Morrel, D. J. Economou, and N. Amundson, “Chemical Vapor Infiltration of SiC with Volume Heating,” J. Mater. Res., 8, 1057-1067, 1993
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  79. P. Jiang and D. J. Economou, “Temporal Evolution of the Electron Energy Distribution Function in Oxygen and Chlorine Gases under DC and AC Fields,” J. Appl. Phys., 73, 8151-8160, 1993
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  80. Q. Xiong, Y. Y. Xue, P. Hor, C. W. Chu, M. Davis, J. Wolfe, S. Deshmukh, and D. Economou, “Effect of pressure on the critical current density of YBa2Cu3O7-δ thin films,” Physica C205, 307, 1993
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  81. S. Deshmukh and D. J. Economou, “Remote Plasma Etching Reactors: Modeling and Experiment,” J. Vac. Sci. Technol. B, 11, 206-215, 1993
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  82. E. Aydil and D. Economou, “Combined Theoretical and Experimental Investigations of Chlorine RF Glow Discharges. I: Theoretical,” J. Electrochem. Soc., 139, 1396-1406, 1992
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  83. E. Aydil and D. Economou, “Combined Theoretical and Experimental Investigations of Chlorine RF Glow Discharges. II: Experimental,” J. Electrochem. Soc., 139, 1406-1412, 1992
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  84. F. Fong, S. Deshmukh, M. Davis, D. Stumbo, J. Wolfe, and D. Economou, “Resolution Limits of Ion Milling for Fabricating Y1Ba2Cu3Ox Nanostructures,” J. Appl. Phys., 71, 2461, 1992
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  85. J. Morrel, D. Economou and N. Amundson, “A Mathematical Model for Chemical Vapor Infiltration with Volume Heating,” J. Electrochem. Soc., 139, 328-336, 1992
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  86. J. Morrel, D. J. Economou, and N. Amundson, “Pulsed-Power Volume-Heating Chemical Vapor Infiltration,” J. Mater. Res., 7, 2447-2457, 1992
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  87. S. Deshmukh and D. J. Economou, “Factors Affecting the Cl Atom Density in a Chlorine Discharge,” J. Appl. Phys., 72, 4597-4607, 1992
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  88. C. B. Shin and D. Economou, “Forced and Natural Convection Effects on the Shape Evolution of Cavities during Wet Chemical Etching,” J. Electrochem. Soc., 138, 527-538, 1991
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  89. D. Economou, E. Aydil, and G. Barna, “In Situ Monitoring of Etching Uniformity in Plasma Reactors,” Solid State Technology, 34, 107-111, 1991
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  90. Eray Aydil and D. Economou, “Multiple Steady-States in a Radio Frequency Chlorine Glow Discharge,” J. Appl. Phys., 69, 109-114, 1991
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  91. M. Davis, J. Wosik, K. Foster, S. Deshmukh, H. Rampersad, S. Shah, P. Siesmen, D. Economou, and J. Wolfe, “Deposition of High Quality Y1Ba2Cu3Ox Thin Films over Large Areas by Pulsed Laser Ablation with Substrate Scanning,” J. Appl. Phys., 69, 7182-7188, 1991
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  92. Ping Jiang and D. Economou, “Wet Etching of GaAs Using a Novel Rotating Cell Reactor,” J. Electrochem. Soc., 138, L28-L29, 1991
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  93. S.-K. Park and D. Economou, “A Mathematical Model for Etching of Silicon Using Tetrafluoromethane in a Radial Flow Plasma Reactor,” J. Electrochem. Soc., 138, 1499-1508, 1991
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  94. Y. J. Zhao, W. K. Chu, D. K. Christen, E. C. Jones, M. F. Davis, J. C. Wolfe, S. C. Deshmukh, and D. J. Economou, “Linewidth Dependence of Critical Current Density in Y1Ba2Cu3Ox Thin Film Microbridges,” Appl. Phys. Lett., 59, 1129-1131, 1991
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  95. Y. J. Zhao, W. K. Chu, M. F. Davis, J. C. Wolfe, S. C. Deshmukh, D. J. Economou, and A. McGuire, “Radiation Damages and Flux Pinning in YBCO Thin Films,” Physica C, 184, 144-148, 1991
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  96. C. B. Shin and D. Economou, “Mass Transfer by Natural and Forced Convection in Open Cavities,” Int. J. Heat Mass Transfer, 33, 2191-2205, 1990
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  97. S.-K. Park and D. Economou, “Numerical Simulation of a Single-Wafer Isothermal Plasma Etching Reactor,” J. Electrochem. Soc., 137, 2624-2634, 1990
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  98. S.-K. Park and D. Economou, “Analysis of a Pulsed-Plasma Chemical Vapor Deposition Reactor with Recycle,” J. Electrochem. Soc., 137, 2103-2116, 1990
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  99. S.-K. Park and D. Economou, “Parametric Studies of a Radio Frequency Glow Discharge Using a Continuum Model,” J. Appl. Phys., 68, 4888-4890, 1990
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  100. S.-K. Park and D. Economou, “Analysis of Low Pressure RF Glow Discharges Using a Continuum Model,” J. Appl. Phys., 68, 3904-3915, 1990
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  101. C. B. Shin and D. Economou, “Effect of Transport and Reaction on the Shape Evolution of Cavities during Wet Chemical Etching,” J. Electrochem. Soc., 136, 1997-2004, 1989
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  102. D. Economou, S.-K. Park, and G. Williams, “Uniformity of Etching in Parallel Plate Plasma Reactors,” J. Electrochem. Soc., 136, 188-198, 1989
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  103. S.-K. Park and D. Economou, “A Mathematical Model for a Plasma-Assisted Downstream Etching Reactor,” J. Appl. Phys., 66, 3256-3267, 1989
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  104. D. Economou and R. Alkire, “A Mathematical Model for a Parallel Plate Plasma Etching Reactor,” J. Electrochem. Soc., 135, 2786-2794, 1988
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  105. D. Economou and R. Alkire, “Effect of Potential Field on Ion Deflection and Shape Evolution of Trenches during Plasma-Assisted Etching,” J. Electrochem. Soc., 135, 941-949, 1988
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  106. D. Economou, D. Evans, and R. Alkire, “A Time-Average Model of the RF Plasma Sheath,” J. Electrochem. Soc., 135, 756-763, 1988
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  107. D. Economou and R. Alkire, “Two-Phase Mass Transfer in Channel Electrolyzers with Gas-Liquid Flow,” J. Electrochem. Soc., 132, 601-608, 1985
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  108. R. Alkire and D. Economou, “Transient Behavior during Film Removal in Diffusion-Controlled Plasma Etching,” J. Electrochem. Soc., 132, 648-656, 1985
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  109. C. Philippopoulos, D. Economou, C. Economou, and J. Marangozis, “Norbornadiene-Quadricyclane System in the Photochemical Conversion and Storage of Solar Energy,” Ind. Eng. Chem. Prod. Res. Dev., 22, 627, 1983
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Books
  1. D. J. Economou, “Computational Modeling in Semiconductor Manufacturing,” AIChE Journal (book review), 1996

 

Editorials / Edited Volumes
  1. M. Meyyappan, D. J. Economou, and S. W. Butler, eds., Proceedings of the 2nd International Symposium on Control, Diagnostics, and Modeling in Semiconductor Manufacturing, The Electrochemical Society Inc., Vol. 97-9, 1997
  2. M. Meyyappan, D. J. Economou, and S. W. Butler, eds., Proceedings of the 1st International Symposium on Control, Diagnostics, and Modeling in Semiconductor Manufacturing, The Electrochemical Society Inc., Vol. 95-2, 1995
  3. R. C. Alkire, N. Masuko, Y. Ito, D. R. Sadoway, and D. J. Economou, eds., Proceedings of the 2nd International Symposium on Electrochemical Processing of Tailored Materials, The Electrochemical Society Inc., Vol. 93-12, 1993

 

Conference Proceedings Publications
  1. B. White, Q. Wang, D. J. Economou, P. J. Wolf, T. Jacobs, and J. Fourcher, “Neutral oxygen beam stripping of photoresist on porous ultra low-k materials,” in Proceedings of the IEEE International Interconnect Technology Conference, June 2-4, 2003 San Francisco, p. 153, 2003
  2. * D. Kim and D. J. Economou, “Multidimensional Plasma Sheaths and Resulting Ion/Fast Neutral Distributions at the Substrate Surface,” in Proceedings of the Seventh International Symposium on Sputtering and Plasma Processes, ISSP 2003, pp. 55-62, Kanazawa, Ishikawa, Japan, 2003
  3. * Badri Ramamurthi and Demetre J. Economou, “Two-Dimensional Simulation of Pulsed power Electronegative Plasmas,” in Proceedings of the Symposium Fundamental Gas-Phase and Surface Chemistry in Vapor-Phase Deposition II, and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV, edited by M. T. Swihart, M. D. Allendorf and M. Meyyappan, The Electrochemical Society, vol. PV 2001-13, pp. 405-414, 2001
  4. * Chang-Koo Kim and Demetre J. Economou, “Energy and Angular Distribution of Ions Extracted from a Large Hole in Contact with a High Density Plasma,” in Proceedings of the Symposium Fundamental Gas-Phase and Surface Chemistry in Vapor-Phase Deposition II, and Process Control, Diagnostics and Modeling in Semiconductor Manufacturing IV, edited by M. T. Swihart, M. D. Allendorf and M. Meyyappan, The Electrochemical Society, vol. PV 2001-13, pp. 308-315, 2001
  5. * D. J. Economou, “Multiscale Modeling in Plasma Engineering and Parallels to Electrochemical Engineering,” in Tutorials in Electrochemical Engineering-Mathematical Modeling, Electrochemical Society Proceedings Volume, R. F. Savinell, editor, 1999
  6. * V. Midha and D.J. Economou, “Effect of Geometry on CVI with RF Heating", Ceramic Engineering and Science Proceedings, 19(3-4), 1998
  7. * J. Feldsien and D. J. Economou, “Parametric Investigation of Plasma Uniformity in a Dome-Shaped Inductively Coupled Plasma Reactor,” in Proceedings of the 2nd International Symposium on Control, Diagnostics, and Modeling in Semiconductor Manufacturing, M. Meyyappan, D. J. Economou, and S. W. Butler, eds., The Electrochemical Society Inc., Vol. 97-9, pp. 260-267, 1997
  8. * V. Midha and D. J. Economou, “A Two-Dimensional Model of Chemical Vapor Infiltration with Radio Frequency Heating,” in Proceedings of the Fourteenth International Conference on Chemical Vapor Deposition and EUROCVD-11, Paris, France, edited by M. D. Allendorf and C. Bernard, The Electrochemical Society Proceedings Volume PV 97-25, pp. 528-535, 1997
  9. D. J. Economou, “Direct Simulation Monte Carlo (DSMC) of Low Pressure Plasma Reactors,” in Proceedings of the International Symposium on Plasma and Fluid Simulation for Materials Processing, edited by K. Nanbu, Vol. 10, pp. 83-90, published by the Institute of Fluid Science, Tohoku University, Sendai, Japan, 1997
  10. D. J. Economou and T. Bartel, “Direct Simulation Monte Carlo (DSMC) of Semiconductor Manufacturing Processes,” in Proceedings of the 11th Plasma Processing Symposium, edited by G. S. Mathad, M. Meyyappan, and D. W. Hess, The Electrochemical Society, PV-96-12, 70-82, 1996
  11. D. J. Economou, D. M. Hoffman, S. P. Rangarajan, S. D. Athavale, J.-R. Liu, Z. Zheng, and W.-K. Chu, “Chemical Vapor Deposition of Aluminum and Gallium Nitride Thin Films from Metalorganic Precursors,” in Proceedings of the Symposium on III-V Nitride Materials and Processes, edited by T. Moustakas and J. P. Dismukes, and S.J. Pearton, The Electrochemical Society Inc., Vol. 96-11, p. 69, 1996
  12. J. Johannes, T. Bartel, D. J. Economou, G. Hebner, R. Wise, and J. Woodworth, “Direct Simulation Monte Carlo of Inductively Coupled Plasma and Comparison with Experiments,” in Proceedings of the 11th Plasma Processing Symposium, edited by G. S. Mathad, M. Meyyappan, and D. W. Hess, The Electrochemical Society, PV-96-12, 20-38, 1996
  13. R. S. Wise, D. P. Lymberopoulos and D. J. Economou, “A TCAD Simulation Tool for Inductively Coupled Plasma Reactors and Comparison with Experiments,” in Proceedings of the 11th Plasma Processing Symposium, edited by G. S. Mathad, M. Meyyappan, and D. W. Hess, The Electrochemical Society, PV-96-12, 11-19, 1996
  14. * D. P. Lymberopoulos R. Wise, and D. J. Economou, Modeling and Simulation of Two-Dimensional Reactive Plasma Flow in Inductively Coupled Reactors, in Proceedings of the 1st International Symposium on Control, Diagnostics, and Modeling in Semiconductor Manufacturing, M. Meyyappan, D. J. Economou, and S. W. Butler, eds., The Electrochemical Society Inc., Vol. 95-2, pp. 588-595, 1995
  15. C. R. Koemtzopoulos, D. J. Economou, and R. Pollard, “Influence of Substrate Placement on Plasma-Assisted Chemical Vapor Deposition of Diamond,” in The Synthesis and Processing of Electronic Materials, Topical Conference Preprints, AIChE Conference, San Francisco, CA, 1994
  16. D. P. Lymberopoulos and D. J. Economou, Modeling and Simulation of Inductively Coupled High Density Plasma Sources, in Proceedings of the 10th Plasma Processing Symposium, edited by G. S. Mathad and D. W. Hess, The Electrochemical Society, Vol. 94-20, pp. 1-12, 1994
  17. D. J. Economou, “Developments in Wet Etching and Deposition for Pattern Delineation,” in Trends in Electrochemistry, Council of Scientific Research Integration, 1993
  18. D. J. Economou, “Modeling Potential Distribution, Transport and Reaction in Gas Plasmas,” in Proc. of the 2nd International Symp. on Electrochemical Processing of Tailored Materials, R. C. Alkire, N. Masuko, Y. Ito, D. R. Sadoway, and D. J. Economou, eds., The Electrochemical Society Inc., 93-12, 1, 1993
  19. D. J. Economou and D. P. Lymberopoulos, “Self-Consistent Simulation of RF Glow Discharges Coupled with Neutral Transport and Reaction,” in Proc. 3rd International Symp. on Process Phys. and Modeling in Semicond. Technol., G. R. Srinivasan, K. Taniguchi, and C. S. Murthy, eds., The Electrochemical Society Inc., 93-6, 1993
  20. S. Deshmukh, S. Athavale and D. J. Economou, “Radical Beam Etching: Application to Patterning of YBa2Cu3O6+x High Tc Superconducting Thin Films,” in Proc. of International Symp. on Highly Selective Dry Etching and Damage Control, G. S. Mathad and Y. Horiike, eds., The Electrochemical Society Inc., 93-21, 235, 1993
  21. E. S. Aydil and D. J. Economou, “Modeling of Plasma Etching Reactors Including Wafer Heating Effects,” in Proc. 9th Plasma Process. Symp., The Electrochemical Society Inc., edited by G. S. Mathad and D. W. Hess, 92-18, 22, 1992
  22. D. Economou and S.-K. Park, “Modeling and Analysis of Pulsed Plasma CVD and Etching Reactors,” in Proc. 8th Plasma Process. Symp., The Electrochemical Society Inc., edited by G. S. Mathad and D. W. Hess, 90-14, 185, 1990
  23. E. Aydil and D. Economou, “Experimental and Modeling Studies of Chlorine RF Glow Discharges,” in Proc. 8th Plasma Process. Symp., The Electrochemical Society Inc., edited by G. S. Mathad and D. W. Hess, 90-14, 77, 1990
  24. G. Barna, J. Spatafora, E. Aydil, and D. Economou, “Spectroscopic Measurement of Etchant Concentration Profiles in a Parallel Plate Plasma Reactor,” in Proceedings of the Society of Manufacturing Engineers, MS90-476, pp. 1-12, 1990
  25. J. Wosik, T. Robin, M. Davis, J. C. Wolfe, K. Foster, S. Deshmukh, A. Bensaoula, R. Sega, D. Economou, and A. Ignatiev, “Dependence of Millimeter Wave Surface Resistance on the Deposition Parameters of Laser Ablated Y1Ba2Cu3Ox Thin Films,” p. 539 in Proceedings of the 2nd Conference on the Science and Technology of Thin Film Superconductors, Denver, Co, 1990
  26. D. Economou, S.-K. Park, and G. Williams, “Parallel Plate Plasma Etching Reactor Modeling: Uniformity of Etching,” in Proc. of the 7th Plasma Process. Symp., The Electrochemical Society Inc., edited by G. S. Mathad, G. C. Schwartz, and D. W. Hess, 88-22, 17, 1988
  27. D. Economou and R. Alkire, In Proceedings of the Advances in the Chlor-Alkali and Chlorate Industry, The Electrochemical Society Inc., 1985
  28. D. Economou and R. Alkire, In Proceedings of the 5th Symposium on Plasma Processing, The Electrochemical Society Inc., 1985